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| si01_p01 |
Overview of Project “CHALLENGE” (3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices)
Francesco La Via (CNR-IMM, Italy)
speaker: Francesco La Via
contact email: francesco.lavia@imm.cnr.it |
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| si01_p02 |
Silicon Carbide Improvements from LPE S.p.A.
Danilo Crippa, (LPE, Italy)
speaker: Danilo Crippa
contact email: danilo.crippa@lpe-epi.com |
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| si01_p03 |
Epitaxial Growth on Low Off-axis and On-axis SiC Substrates
Peder Bergman (Linkoping University, Sweden)
speaker: Peder Bergman
contact email: |
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| si01_p04 |
Hetero-epitaxy of 3C-SiC/Si on deeply patterned substrates
Roberto Bergamaschini, (Università di Milano Bicocca, Italy)
speaker: Roberto Bergamaschini
contact email: roberto.bergamaschini@unimib.it |
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| si01_p05 |
The process of hetero-epitaxy of 3C-SiC/Si: new developments
Marcin Zielinski (NOVASiC, France)
speaker: Marcin Zielinski
contact email: mzielinski@novasic.com |
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| si01_p06 |
The bulk growth of 3C-SiC: different approaches
Peter Wellmann (University of Erlanghen, Germany)
speaker: Peter Wellmann
contact email: |
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| si01_p07 |
Interaction of APBs and SFs: experiments and simulations
Massimo Zimbone (CNR-IMM, Italy)
speaker: Massimo Zimbone
contact email: |
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| si01_p08 |
Scanning probe microscopy for silicon carbide technology
Filippo Giannazzo (CNR-IMM, Italy)
speaker: Filippo Giannazzo
contact email: |
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