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    miSW Rel. 6.2
    Tuesday - 26 October 2021   
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SiCE-2020 Special Session 

Fabrizio Roccaforte - CNR-IMM


si01_p01 Overview of Project “CHALLENGE” (3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices)

Francesco La Via (CNR-IMM, Italy)

speaker: Francesco La Via
contact email: francesco.lavia@imm.cnr.it

si01_p02 Silicon Carbide Improvements from LPE S.p.A.

Danilo Crippa, (LPE, Italy)

speaker: Danilo Crippa
contact email: danilo.crippa@lpe-epi.com

si01_p03 Epitaxial Growth on Low Off-axis and On-axis SiC Substrates

Peder Bergman (Linkoping University, Sweden)

speaker: Peder Bergman
contact email:

si01_p04 Hetero-epitaxy of 3C-SiC/Si on deeply patterned substrates

Roberto Bergamaschini, (Università di Milano Bicocca, Italy)

speaker: Roberto Bergamaschini
contact email: roberto.bergamaschini@unimib.it

si01_p05 The process of hetero-epitaxy of 3C-SiC/Si: new developments

Marcin Zielinski (NOVASiC, France)

speaker: Marcin Zielinski
contact email: mzielinski@novasic.com

si01_p06 The bulk growth of 3C-SiC: different approaches

Peter Wellmann (University of Erlanghen, Germany)

speaker: Peter Wellmann
contact email:

si01_p07 Interaction of APBs and SFs: experiments and simulations

Massimo Zimbone (CNR-IMM, Italy)

speaker: Massimo Zimbone
contact email:

si01_p08 Scanning probe microscopy for silicon carbide technology

Filippo Giannazzo (CNR-IMM, Italy)

speaker: Filippo Giannazzo
contact email:













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