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    Wednesday - 2 December 2020   
 
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SiCE-2020 Special Session 
Devices and processing

Chair:
Susanna Reggiani - Università di Bologna - IU.NET
susanna.reggiani@unibo.it


 


si02_p01 Overview of Project “WInSiC4AP” (Wide Bandgap Innovative SiC for Advanced Power)

Leoluca Liggio (Distretto Tecnologico Micro e Nano Sistemi, Catania, Italy), Antonio Imbruglia (STMicroelectronics, Italy)

speaker: Leoluca Liggio
contact email:

si02_p02 Processing and first results of 3C-SiC devices

Mike Jennings (University of Swansea, UK)

speaker: Mike Jennings
contact email:

si02_p03 Laser annealing for Ohmic contact in 4H-SiC devices

Clément Berger (University of Tours - GREMAN, France)

speaker: Clément Berger
contact email:

si02_p04 Study of annealing processes for electrical activation of p and n-type doping implantation on 4H-SiC

Monia Spera (CNR-IMM, Italy)

speaker: Monia Spera
contact email:

si02_p05 Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC Layers: comparison of two methodologies

Roberta Nipoti (CNR-IMM, Italy)

speaker: Roberta Nipoti
contact email:

si02_p06 Current conduction mechanism in forward and reverse biased WC Schottky contact on 4H-SiC

Marilena Vivona (CNR-IMM, Italy)

speaker: Marilena Vivona
contact email:

si02_p07 Preliminary Evaluation of VTH and RON Drifts in SiC devices

Marcello Cioni (University of Modena and Reggio Emilia, Italy)

speaker: Marcello Cioni
contact email:

si02_p08 3C-SiC MOSFET structure and oxide reliability

Fan Li (University of Warwick, UK)

speaker: Fan Li
contact email:

  

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