SiCE-2020 Special Session Devices and processing
Chair: Susanna Reggiani - Università di Bologna - IU.NET susanna.reggiani@unibo.it
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si02_p01 |
Overview of Project “WInSiC4AP” (Wide Bandgap Innovative SiC for Advanced Power)
Leoluca Liggio (Distretto Tecnologico Micro e Nano Sistemi, Catania, Italy), Antonio Imbruglia (STMicroelectronics, Italy)
speaker: Leoluca Liggio contact email: |
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si02_p02 |
Processing and first results of 3C-SiC devices
Mike Jennings (University of Swansea, UK)
speaker: Mike Jennings contact email: |
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si02_p03 |
Laser annealing for Ohmic contact in 4H-SiC devices
Clément Berger (University of Tours - GREMAN, France)
speaker: Clément Berger contact email: |
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si02_p04 |
Study of annealing processes for electrical activation of p and n-type doping implantation on 4H-SiC
Monia Spera (CNR-IMM, Italy)
speaker: Monia Spera contact email: |
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si02_p05 |
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC Layers: comparison of two methodologies
Roberta Nipoti (CNR-IMM, Italy)
speaker: Roberta Nipoti contact email: |
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si02_p06 |
Current conduction mechanism in forward and reverse biased WC Schottky contact on 4H-SiC
Marilena Vivona (CNR-IMM, Italy)
speaker: Marilena Vivona contact email: |
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si02_p07 |
Preliminary Evaluation of VTH and RON Drifts in SiC devices
Marcello Cioni (University of Modena and Reggio Emilia, Italy)
speaker: Marcello Cioni contact email: |
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si02_p08 |
3C-SiC MOSFET structure and oxide reliability
Fan Li (University of Warwick, UK)
speaker: Fan Li contact email: |
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