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    Wednesday - 2 December 2020   
 
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SiCE-2020 Special Session 
Reliability and Applications

Chairs:
Antonio Imbruglia (*), Angelo Messina (^)
(*)STMicroelectronics - antonio.imbruglia@st.com
(^)STMicroelectronics - angelo.messina@gmail.com

 


si03_p01 Overview of Project “REACTION” (first and euRopEAn siC eighT Inches pilOt line”

Angelo Messina (STMicroelectronics, Italy)

speaker: Angelo Messina
contact email:

si03_p02 Reliability issues in 4H-SiC MOSFETs: impact of oxide traps and threading dislocations

Patrick Fiorenza (CNR-IMM, Italy)

speaker: Patrick Fiorenza
contact email:

si03_p03 Reliability assessment trough mathematical model of SIC MOSFET

Salvatore Patané (University of Messina, Italy)

speaker: Salvatore Patané
contact email:

si03_p04 Simulation of thermal effects in 4H-SiC MOSFETs

Daniela Cavallaro (STMicroelectronics, Italy)

speaker: Daniela Cavallaro
contact email:

si03_p05 Experimental tests and EMI characterization on a SiC switching device

Filippo Pellitteri (University of Palermo, Italy)

speaker: Filippo Pellitteri
contact email:

si03_p06 Electrothermal Circuit Model of SiC Power MOSFET Based on Neural Network

Ales Chvala (SUT, Bratislava, Slovakia)

speaker: Ales Chvala
contact email:

si03_p07 SiC Based 15kW DC-DC Converter Development as an outcome of the first and euRopEAn siC eigTh Inches pilOt line - the ECSEL-JU

Tomasz Bieniek (IET, Poland)

speaker: Tomasz Bieniek
contact email:

si03_p08 Recent advances in packaging technology for SiC power devices

Jacques Favre (APSI3D, France)

speaker: Jacques Favre
contact email:

  

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